Open AccessErratum: “Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy,” [APL. Mater. 9, 031101 (2021)]
Author(s) -
Patrick Vogt,
Felix V. E. Hensling,
Kathy Azizie,
Celesta S. Chang,
David B. Turner,
Jisung Park,
Jonathan P. McCandless,
Hanjong Paik,
Brandon Bocklund,
Georg Hoffmann,
Oliver Bierwagen,
Debdeep Jena,
Huili Grace Xing,
Shin Mou,
David A. Muller,
ShunLi Shang,
ZiKui Liu,
Darrell G. Schlom
Publication year - 2021
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/5.0050412
Subject(s) - materials science , molecular beam epitaxy , adsorption , epitaxy , suboxide , optoelectronics , chemistry , nanotechnology , silicon , layer (electronics)
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