Open AccessThe impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices
Author(s) -
Kai Fu,
Houqiang Fu,
Xuguang Deng,
Po Yi Su,
Hanxiao Liu,
Kevin Hatch,
ChienHong Cheng,
D. C. Messina,
Reza Vatan Meidanshahi,
Prudhvi Peri,
Chen Yang,
Tsung Han Yang,
Jossue Montes,
Jingan Zhou,
Xinyuan Qi,
Stephen M. Goodnick,
Fernando Ponce,
David J. Smith,
R. J. Nemanich,
Yuji Zhao
Publication year - 2021
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0049473
Subject(s) - materials science , optoelectronics , gallium nitride , epitaxy , etching (microfabrication) , diode , doping , dry etching , wide bandgap semiconductor , impurity , silicon , nanotechnology , chemistry , layer (electronics) , organic chemistry