Open AccessThe impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices
Author(s) -
Kai Fu,
Houqiang Fu,
Xuguang Deng,
Po-Yi Su,
Hanxiao Liu,
Kevin Hatch,
Chi-Yin Cheng,
D. C. Messina,
Reza Vatan Meidanshahi,
Prudhvi Peri,
Chen Yang,
Tsung-Han Yang,
Jossue Montes,
Jingan Zhou,
Xin Qi,
Stephen M. Goodnick,
F. A. Ponce,
David J. Smith,
R. J. Nemanich,
Yuji Zhao
Publication year - 2021
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0049473
Subject(s) - materials science , optoelectronics , gallium nitride , epitaxy , etching (microfabrication) , diode , doping , dry etching , wide bandgap semiconductor , impurity , silicon , nanotechnology , chemistry , layer (electronics) , organic chemistry
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