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Effect of electric field and vertical strain on the electro-optical properties of the MoSi2N4 bilayer: A first-principles calculation
Author(s) -
A. Bafekry,
Catherine Stampfl,
Mosayeb Naseri,
Mohamed M. Fadlallah,
Mehrdad Faraji,
Mitra Ghergherehchi,
D. Gogova,
S. A. H. Feghhi
Publication year - 2021
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0044976
Subject(s) - electric field , band gap , bilayer , condensed matter physics , materials science , monolayer , semiconductor , strain (injury) , density functional theory , absorption edge , optoelectronics , wide bandgap semiconductor , phase (matter) , nanotechnology , chemistry , computational chemistry , physics , medicine , biochemistry , quantum mechanics , membrane , organic chemistry

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