Open AccessHigh n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
Author(s) -
M. Hayden Breckenridge,
Pegah Bagheri,
Qiang Guo,
Biplab Sarkar,
Dolar Khachariya,
Spyridon Pavlidis,
James Tweedie,
Ronny Kirste,
Seiji Mita,
Pramod Reddy,
Ramón Collazo,
Zlatko Sitar
Publication year - 2021
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0042857
Subject(s) - annealing (glass) , conductivity , materials science , dopant , doping , ion implantation , electrical resistivity and conductivity , optoelectronics , silicon , fermi level , analytical chemistry (journal) , dislocation , electron mobility , chemistry , ion , metallurgy , composite material , electrical engineering , physics , organic chemistry , quantum mechanics , chromatography , engineering , electron