Open AccessHigh n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
Author(s) -
M. Hayden Breckenridge,
Pegah Bagheri,
Qiang Guo,
Biplab Sarkar,
Dolar Khachariya,
Spyridon Pavlidis,
James Tweedie,
Ronny Kirste,
Seiji Mita,
Pramod Reddy,
Ramón Collazo,
Zlatko Sitar
Publication year - 2021
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0042857
Subject(s) - annealing (glass) , materials science , conductivity , dopant , doping , ion implantation , optoelectronics , electrical resistivity and conductivity , analytical chemistry (journal) , fermi level , silicon , electron mobility , ion , chemistry , metallurgy , electrical engineering , physics , organic chemistry , chromatography , quantum mechanics , engineering , electron
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