Open AccessVoid containing AlN layer grown on AlN nanorods fabricated by polarity selective epitaxy and etching method
Author(s) -
Byeongchan So,
Junchae Lee,
Changheon Cheon,
Joohyoung Lee,
Uiho Choi,
Minho Kim,
Jin Dong Song,
Joonyeon Chang,
Okhyun Nam
Publication year - 2021
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0042631
Subject(s) - materials science , nanorod , void (composites) , epitaxy , optoelectronics , layer (electronics) , chemical vapor deposition , etching (microfabrication) , template , wide bandgap semiconductor , crystal (programming language) , metalorganic vapour phase epitaxy , nanotechnology , chemical engineering , composite material , computer science , engineering , programming language
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