Open AccessMBE growth and donor doping of coherent ultrawide bandgap AlGaN alloy layers on single-crystal AlN substrates
Author(s) -
Kevin Lee,
Ryan Page,
Vladimir Protasenko,
L. J. Schowalter,
Masato Toita,
Huili Grace Xing,
Debdeep Jena
Publication year - 2021
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0037079
Subject(s) - materials science , epitaxy , doping , heterojunction , optoelectronics , molecular beam epitaxy , band gap , crystal (programming language) , dopant , wide bandgap semiconductor , nitride , nanotechnology , layer (electronics) , computer science , programming language