Open AccessConduction band offset-dependent induced threshold voltage shifts in a-InGaZnO TFTs under positive bias illumination stress
Author(s) -
Hyojung Kim,
Soonkon Kim,
Jongmin Yoo,
Changyong Oh,
Bo Sung Kim,
Hyuncheol Hwang,
Jungmin Park,
Pyungho Choi,
JangKun Song,
Kiju Im,
Byoungdeog Choi
Publication year - 2021
Publication title -
aip advances
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0035379
Subject(s) - thin film transistor , threshold voltage , materials science , optoelectronics , dielectric , amorphous solid , gate dielectric , band offset , transistor , band gap , voltage , electrical engineering , chemistry , valence band , layer (electronics) , nanotechnology , crystallography , engineering
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom