Open AccessHigh-temperature annealing of AlN films grown on 4H–SiC
Author(s) -
F. Brunner,
Leonardo Cancellara,
Sylvia Hagedorn,
M. Albrecht,
M. Weyers
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0027330
Subject(s) - annealing (glass) , materials science , epitaxy , impurity , dislocation , sapphire , secondary ion mass spectrometry , dissolution , analytical chemistry (journal) , crystallography , metallurgy , chemical engineering , composite material , ion , chemistry , optics , laser , physics , organic chemistry , layer (electronics) , chromatography , engineering
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