Open AccessFabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs
Author(s) -
Runze Lin,
Desheng Zhao,
Guohao Yu,
Xiaoyan Liu,
Dongdong Wu,
Erdan Gu,
Xugao Cui,
Ran Liu,
Baoshun Zhang,
Pengfei Tian
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0025587
Subject(s) - high electron mobility transistor , materials science , substrate (aquarium) , optoelectronics , wafer , epitaxy , etching (microfabrication) , fabrication , transistor , silicon , gallium nitride , nanotechnology , electrical engineering , layer (electronics) , engineering , medicine , oceanography , alternative medicine , voltage , pathology , geology
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