Open AccessMonolayer 1T-LaN2: Dirac spin-gapless semiconductor of p-state and Chern insulator with a high Chern number
Author(s) -
Linyang Li,
Xiangru Kong,
Xin Chen,
Jia Li,
Biplab Sanyal,
F. M. Peeters
Publication year - 2020
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0023531
Subject(s) - monolayer , condensed matter physics , half metal , gapless playback , magnetism , ground state , band gap , fermi level , quantum anomalous hall effect , electronic band structure , materials science , ferromagnetism , physics , electron , spintronics , nanotechnology , quantum hall effect , quantum mechanics
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