Defect suppression in wet-treated etched-and-regrown nonpolar m-plane GaN vertical Schottky diodes: A deep-level optical spectroscopy analysis | Zendy

Andrew Aragon | Zendy; Morteza Monavarian | Zendy; Greg Pickrell | Zendy; Mary H. Crawford | Zendy; Andrew A. Allerman | Zendy; Daniel Feezell | Zendy; Andrew Armstrong | Zendy

Open Access

Defect suppression in wet-treated etched-and-regrown nonpolar m-plane GaN vertical Schottky diodes: A deep-level optical spectroscopy analysis

Author(s) -

Andrew Aragon,

Morteza Monavarian,

Greg Pickrell,

Mary H. Crawford,

Andrew A. Allerman,

Daniel Feezell,

Andrew Armstrong

Publication year - 2020

Publication title -

journal of applied physics

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/5.0018829

Subject(s) - dry etching , schottky diode , etching (microfabrication) , materials science , doping , etch pit density , optoelectronics , schottky barrier , diode , inductively coupled plasma , analytical chemistry (journal) , scanning electron microscope , reactive ion etching , plasma etching , chemistry , plasma , nanotechnology , composite material , physics , layer (electronics) , quantum mechanics , chromatography

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