Open AccessDefect suppression in wet-treated etched-and-regrown nonpolar m-plane GaN vertical Schottky diodes: A deep-level optical spectroscopy analysis
Author(s) -
Andrew Aragon,
Morteza Monavarian,
Gregory Pickrell,
Mary H. Crawford,
Andrew A. Allerman,
Daniel Feezell,
Andrew M. Armstrong
Publication year - 2020
Publication title -
journal of applied physics
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0018829
Subject(s) - dry etching , schottky diode , etching (microfabrication) , materials science , doping , etch pit density , optoelectronics , schottky barrier , diode , inductively coupled plasma , analytical chemistry (journal) , scanning electron microscope , reactive ion etching , plasma etching , chemistry , plasma , nanotechnology , composite material , physics , layer (electronics) , quantum mechanics , chromatography