z-logo
open-access-imgOpen Access
Gunn threshold voltage characterization in GaAs devices with wedge-shaped tapering
Author(s) -
Hua-Wei Hsu,
Michael Dominguez,
Vanessa Sih
Publication year - 2020
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0016101
Subject(s) - tapering , wedge (geometry) , materials science , voltage , electric field , threshold voltage , gallium arsenide , optoelectronics , finite element method , electrical engineering , optics , computer science , transistor , physics , engineering , structural engineering , quantum mechanics , computer graphics (images)

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom