Open AccessChemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN
Author(s) -
Dolar Khachariya,
Dennis Szymanski,
Rohan Sengupta,
Pramod Reddy,
E. Kohn,
Zlatko Sitar,
Ramón Collazo,
Spyridon Pavlidis
Publication year - 2020
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0015140
Subject(s) - x ray photoelectron spectroscopy , schottky diode , schottky barrier , chemical vapor deposition , chemistry , analytical chemistry (journal) , diode , metalorganic vapour phase epitaxy , materials science , polar , wide bandgap semiconductor , optoelectronics , nanotechnology , epitaxy , chemical engineering , organic chemistry , layer (electronics) , engineering , physics , astronomy
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