Open AccessDirect epitaxial nanometer-thin InN of high structural quality on 4H–SiC by atomic layer deposition
Author(s) -
ChihWei Hsu,
Petro Deminskyi,
Ivan Martinovic,
Ivan G. Ivanov,
Justinas Pališaitis,
Henrik Pedersen
Publication year - 2020
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0014900
Subject(s) - materials science , indium nitride , atomic layer deposition , optoelectronics , thin film , epitaxy , nanometre , heterojunction , wide bandgap semiconductor , substrate (aquarium) , raman spectroscopy , layer (electronics) , indium , nanotechnology , surface roughness , chemical vapor deposition , nitride , transmission electron microscopy , electron mobility , optics , composite material , physics , oceanography , geology
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