A 2 kW S-band RF source for multipactor research utilizing GaN HEMTs
Author(s) -
Benedikt Esser,
Z. Shaw,
J. Dickens,
A. Neuber
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0009836
Subject(s) - gallium nitride , materials science , optoelectronics , resonator , transistor , pulsed power , electrical impedance , radio frequency , wide bandgap semiconductor , electrical engineering , voltage , engineering , nanotechnology , layer (electronics)
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