Open AccessResistive memory based on single-crystalline black phosphorus flake/HfOx structure
Author(s) -
Xiaoyuan Yan,
Xueting Wang,
Boran Xing,
Ying Yu,
Jiadong Yao,
Xinyue Niu,
Mengge Li,
Jian Sha,
Yewu Wang
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0004526
Subject(s) - resistive random access memory , black phosphorus , materials science , layer (electronics) , optoelectronics , flake , resistive touchscreen , hafnium , non volatile memory , nanotechnology , composite material , metallurgy , electrical engineering , electrode , chemistry , zirconium , engineering
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