Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films | Zendy

Sanjie Liu | Zendy; Gang Zhao | Zendy; Yingfeng He | Zendy; Yangfeng Li | Zendy; Huiyun Wei | Zendy; Peng Qiu | Zendy; Xinyi Wang | Zendy; Xixi Wang | Zendy; Jiadong Cheng | Zendy; Mingzeng Peng | Zendy; Francisco Zaera | Zendy; Xinhe Zheng | Zendy

Open Access

Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films

Author(s) -

Sanjie Liu,

Gang Zhao,

Yingfeng He,

Yangfeng Li,

Huiyun Wei,

Peng Qiu,

Xinyi Wang,

Xixi Wang,

Jiadong Cheng,

Mingzeng Peng,

Francisco Zaera,

Xinhe Zheng

Publication year - 2020

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/5.0003021

Subject(s) - sapphire , materials science , epitaxy , layer (electronics) , atomic layer deposition , gallium nitride , optoelectronics , plasma , substrate (aquarium) , atomic layer epitaxy , wide bandgap semiconductor , thin film , nitride , gallium , deposition (geology) , nanotechnology , optics , laser , metallurgy , paleontology , physics , quantum mechanics , sediment , geology , oceanography , biology

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