Open AccessInterface trap and border trap characterization for Al2O3/GeOx/Ge gate stacks and influence of these traps on mobility of Ge p-MOSFET
Author(s) -
Wei-Chen Wen,
Yuta Nagatomi,
Hiroshi Akamine,
Keisuke Yamamoto,
Dong Wang,
Hiroshi Nakashima
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0002100
Subject(s) - materials science , germanium , mosfet , deep level transient spectroscopy , optoelectronics , transistor , capacitor , oxide , field effect transistor , analytical chemistry (journal) , electrical engineering , chemistry , silicon , voltage , chromatography , metallurgy , engineering
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