Open AccessGaAs growth rates of 528 μm/h using dynamic-hydride vapor phase epitaxy with a nitrogen carrier gas
Author(s) -
Elisabeth L. McClure,
Kevin L. Schulte,
John Simon,
Wondwosen Metaferia,
Aaron J. Ptak
Publication year - 2020
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0002053
Subject(s) - hydride , analytical chemistry (journal) , hydrogen , nitrogen , epitaxy , wafer , surface roughness , chemistry , thermal decomposition , chemical vapor deposition , materials science , optoelectronics , nanotechnology , organic chemistry , layer (electronics) , chromatography , composite material