Relaxation time broadening on emission spectrum of a Zn-doped p-type GaAs injection laser | Zendy

Minoru Yamada | Zendy; Akira Tanaka | Zendy; Kiyoshi Moriya | Zendy; Yuichi Kado | Zendy

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Relaxation time broadening on emission spectrum of a Zn-doped p-type GaAs injection laser

Author(s) -

Minoru Yamada,

Akira Tanaka,

Kiyoshi Moriya,

Yuichi Kado

Publication year - 1983

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.94520

Subject(s) - lasing threshold , relaxation (psychology) , doping , laser , materials science , wide bandgap semiconductor , spontaneous emission , electron , atomic physics , semiconductor , semiconductor laser theory , amplified spontaneous emission , scattering , gallium arsenide , emission spectrum , condensed matter physics , spectral line , optoelectronics , optics , physics , psychology , social psychology , quantum mechanics , astronomy

Spontaneous emission and lasing gain profiles of semiconductor injection lasers which have Zn-doped GaAs active regions were experimentally determined, and the tailing phenomenon into the band gap of these profiles was theoretically explained as a result of relaxation time broadening due to scattering of electrons and holes. Especially, the tail of the gain profile was found to show a concave shape, which was better explained by the relaxation time broadening model than by the band tail state model

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