Open AccessRecombination-enhanced dislocation climb in InAs quantum dot lasers on silicon
Author(s) -
Kunal Mukherjee,
Jennifer Selvidge,
Daehwan Jung,
Justin Norman,
Aidan A. Taylor,
Mike Salmon,
Alan Y. Liu,
John E. Bowers,
Robert W. Herrick
Publication year - 2020
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5143606
Subject(s) - climb , cathodoluminescence , dislocation , materials science , quantum dot , silicon , laser , vacancy defect , condensed matter physics , epitaxy , optoelectronics , partial dislocations , optics , nanotechnology , physics , luminescence , composite material , thermodynamics , layer (electronics)
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