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Quantum mechanical analysis of 2D transition metal dichalcogenide material based vertical heterojunction tunnel FET
Author(s) -
Tanmoy Kumar Paul,
Quazi D. M. Khosru
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5142188
Subject(s) - heterojunction , materials science , permittivity , condensed matter physics , quantum tunnelling , hamiltonian (control theory) , optoelectronics , poisson's equation , dielectric , subthreshold slope , quantum well , field effect transistor , physics , transistor , voltage , quantum mechanics , mathematics , mathematical optimization , laser

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