The role of chemical potential in compensation control in Si:AlGaN
Author(s) -
Shun Washiyama,
Pramod Reddy,
Biplab Sarkar,
M. Hayden Breckenridge,
Qiang Guo,
Pegah Bagheri,
Andrew Klump,
Ronny Kirste,
James Tweedie,
Seiji Mita,
Zlatko Sitar,
Ramón Collazo
Publication year - 2020
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5132953
Subject(s) - impurity , supersaturation , materials science , conductivity , photoluminescence , compensation (psychology) , vacancy defect , nitrogen , hall effect , electrical resistivity and conductivity , doping , crystal (programming language) , optoelectronics , analytical chemistry (journal) , thermodynamics , chemistry , crystallography , computer science , electrical engineering , programming language , physics , psychology , organic chemistry , engineering , chromatography , psychoanalysis
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