Open AccessThe role of chemical potential in compensation control in Si:AlGaN
Author(s) -
Shun Washiyama,
Pramod Reddy,
Biplab Sarkar,
M. Hayden Breckenridge,
Qiang Guo,
Pegah Bagheri,
Andrew Klump,
Ronny Kirste,
James Tweedie,
Seiji Mita,
Zlatko Sitar,
Ramón Collazo
Publication year - 2020
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5132953
Subject(s) - impurity , supersaturation , conductivity , compensation (psychology) , materials science , vacancy defect , photoluminescence , hall effect , doping , nitrogen , crystal (programming language) , electrical resistivity and conductivity , analytical chemistry (journal) , optoelectronics , chemistry , crystallography , computer science , electrical engineering , psychology , organic chemistry , engineering , chromatography , psychoanalysis , programming language