Open AccessCharge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs
Author(s) -
Protyush Sahu,
Junyang Chen,
JianPing Wang
Publication year - 2020
Publication title -
aip advances
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5130198
Subject(s) - materials science , trapping , threshold voltage , optoelectronics , field effect transistor , x ray photoelectron spectroscopy , transistor , leakage (economics) , gate oxide , electron , quantum tunnelling , analytical chemistry (journal) , voltage , electrical engineering , chemistry , physics , nuclear magnetic resonance , quantum mechanics , ecology , macroeconomics , chromatography , economics , biology , engineering
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