Critical parameters for the presence of a 2DEG in GaN/AlxGa1−xN heterostructures
Author(s) -
Tobias Scheinert,
Thomas Mikolajick,
S. Schmult
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5126917
Subject(s) - mole fraction , heterojunction , fermi gas , fraction (chemistry) , materials science , stack (abstract data type) , condensed matter physics , aluminium , chemistry , analytical chemistry (journal) , electron , physics , optoelectronics , metallurgy , organic chemistry , programming language , chromatography , quantum mechanics , computer science
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom