Open AccessControl of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control
Author(s) -
Andrew Klump,
Marc P. Hoffmann,
Felix Kaess,
James Tweedie,
Pramod Reddy,
Ronny Kirste,
Zlatko Sitar,
Ramón Collazo
Publication year - 2020
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5126004
Subject(s) - passivation , doping , analytical chemistry (journal) , photoluminescence , fermi level , annealing (glass) , materials science , secondary ion mass spectrometry , band gap , chemical vapor deposition , wide bandgap semiconductor , hall effect , optoelectronics , ion , chemistry , electrical resistivity and conductivity , nanotechnology , metallurgy , electrical engineering , electron , physics , organic chemistry , engineering , layer (electronics) , chromatography , quantum mechanics