Open AccessInline deposited PassDop layers for rear side passivation and contacting of p-type c-Si PERL solar cells with high bifaciality
Author(s) -
Mohammad Hassan Norouzi,
Pierre SaintCast,
Elmar Lohmüller,
Sabrina Lohmüller,
Bernd Steinhauser,
Andreas Wolf,
Marc Hofmann
Publication year - 2019
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.5123881
Subject(s) - passivation , materials science , doping , optoelectronics , silicon , dopant , layer (electronics) , crystalline silicon , wafer , nanotechnology
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