Open AccessIn situ and selective area etching of GaN by tertiarybutylchloride (TBCl)
Author(s) -
Bingjun Li,
Mohsen Nami,
Sizhen Wang,
Jung Han
Publication year - 2019
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5120420
Subject(s) - etching (microfabrication) , desorption , materials science , chemical vapor deposition , dry etching , reactive ion etching , optoelectronics , gallium nitride , isotropic etching , nitride , nanotechnology , analytical chemistry (journal) , chemical engineering , chemistry , layer (electronics) , adsorption , chromatography , engineering