Open AccessMultidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor
Author(s) -
James Spencer Lundh,
Bikramjit Chatterjee,
Yiwen Song,
Albert G. Baca,
Robert Kaplar,
Thomas E. Beechem,
Andrew A. Allerman,
Andrew M. Armstrong,
Brianna Klein,
Anushka Bansal,
Disha Talreja,
Alexej Pogrebnyakov,
Eric R. Heller,
Venkatraman Gopalan,
Joan M. Redwing,
Brian M. Foley,
Sukwon Choi
Publication year - 2019
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5115013
Subject(s) - high electron mobility transistor , materials science , optoelectronics , wide bandgap semiconductor , transistor , electron mobility , thermal conductivity , gallium nitride , band gap , ternary operation , nanotechnology , electrical engineering , computer science , composite material , voltage , layer (electronics) , programming language , engineering