Open AccessStructural, band and electrical characterization of β-(Al0.19Ga0.81)2O3 films grown by molecular beam epitaxy on Sn doped β-Ga2O3 substrate
Author(s) -
Abhishek Vaidya,
Jith Sarker,
Yi Zhang,
Lauren Lubecki,
Joshua S. Wallace,
Jonathan D. Poplawsky,
Kohei Sasaki,
Akito Kuramata,
Amit Goyal,
Joseph A. Gardella,
Baishakhi Mazumder,
Uttam Singisetti
Publication year - 2019
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5113509
Subject(s) - molecular beam epitaxy , x ray photoelectron spectroscopy , materials science , doping , analytical chemistry (journal) , epitaxy , band gap , substrate (aquarium) , optoelectronics , chemistry , layer (electronics) , nanotechnology , nuclear magnetic resonance , physics , oceanography , chromatography , geology