Open AccessThe role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance
Author(s) -
Ehsan Vadiee,
Evan A. Clinton,
Joseph A. Carpenter,
Heather McFavilen,
C. Arena,
Zachary C. Holman,
Christiana B. Honsberg,
W. Alan Doolittle
Publication year - 2019
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5112498
Subject(s) - homojunction , materials science , metalorganic vapour phase epitaxy , optoelectronics , doping , molecular beam epitaxy , diode , chemical vapor deposition , heterojunction , epitaxy , analytical chemistry (journal) , nanotechnology , layer (electronics) , chemistry , chromatography