Open AccessInvestigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy
Author(s) -
Gregory Pickrell,
Andrew Armstrong,
Andrew A. Allerman,
Mary H. Crawford,
Caleb Glaser,
Jeffrey Michael Kempisty,
Vincent M. Abate
Publication year - 2019
Publication title -
journal of applied physics
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5110521
Subject(s) - diode , materials science , leakage (economics) , optoelectronics , reverse leakage current , epitaxy , chemical vapor deposition , spectroscopy , light emitting diode , wide bandgap semiconductor , band gap , analytical chemistry (journal) , schottky diode , layer (electronics) , chemistry , nanotechnology , physics , quantum mechanics , chromatography , economics , macroeconomics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom