z-logo
open-access-imgOpen Access
Strain engineering 4H-SiC with ion beams
Author(s) -
F. X. Zhang,
Tong Yang,
Haizhou Xue,
Jong K. Keum,
Yongfeng Zhang,
Alexandre Boulle,
A. Debelle,
William J. Weber
Publication year - 2019
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5109226
Subject(s) - ion , fluence , irradiation , rutherford backscattering spectrometry , materials science , annealing (glass) , scattering , single crystal , ionization , diffraction , analytical chemistry (journal) , atomic physics , crystallography , chemistry , optics , nuclear physics , physics , composite material , organic chemistry , chromatography

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here