Open AccessObservation and mitigation of RF-plasma-induced damage to III-nitrides grown by molecular beam epitaxy
Author(s) -
Evan A. Clinton,
Ehsan Vadiee,
M. Brooks Tellekamp,
W. Alan Doolittle
Publication year - 2019
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5097557
Subject(s) - molecular beam epitaxy , materials science , plasma , analytical chemistry (journal) , indium , indium nitride , photoluminescence , langmuir probe , band gap , rf power amplifier , nitride , optoelectronics , chemistry , plasma diagnostics , epitaxy , nanotechnology , amplifier , layer (electronics) , physics , quantum mechanics , chromatography , cmos
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