Open AccessEvidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs
Author(s) -
Andrew Espenlaub,
Daniel J. Myers,
Erin C. Young,
Saulius Marcinkevičius,
C. Weisbuch,
James S. Speck
Publication year - 2019
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5096773
Subject(s) - light emitting diode , auger effect , optoelectronics , spontaneous emission , photocurrent , non radiative recombination , materials science , radiative transfer , auger , carrier generation and recombination , photoluminescence , nitride , carrier lifetime , trap (plumbing) , voltage droop , diode , chemistry , physics , atomic physics , optics , laser , semiconductor , nanotechnology , silicon , semiconductor materials , layer (electronics) , voltage , quantum mechanics , meteorology , voltage divider