Open AccessDemonstration and analysis of a 600 V, 10 A, 4H-SiC lateral single RESURF MOSFET for power ICs applications
Author(s) -
Nick Yun,
Justin Lynch,
Woongje Sung
Publication year - 2019
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5094407
Subject(s) - jfet , breakdown voltage , materials science , mosfet , optoelectronics , power mosfet , silicon carbide , electrical engineering , fabrication , power semiconductor device , high voltage , substrate (aquarium) , voltage , engineering physics , field effect transistor , transistor , engineering , composite material , medicine , oceanography , alternative medicine , pathology , geology
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