Open AccessInterwell carrier transport in InGaN/(In)GaN multiple quantum wells
Author(s) -
S. Marcinkevičius,
Rinat Yapparov,
Leah Y. Kuritzky,
YuhRenn Wu,
Shuji Nakamura,
Steven P. DenBaars,
James S. Speck
Publication year - 2019
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5092585
Subject(s) - quantum well , optoelectronics , thermionic emission , light emitting diode , lasing threshold , materials science , photoluminescence , diode , auger effect , wide bandgap semiconductor , indium gallium nitride , electroluminescence , gallium nitride , laser , electron mobility , electron , optics , physics , wavelength , nanotechnology , quantum mechanics , layer (electronics)
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