Open AccessDelta-doped SrTiO3 top-gated field effect transistor
Author(s) -
Hisashi Inoue,
Hyeok Yoon,
Tyler A. Merz,
Adrian Swartz,
Seung Sae Hong,
Yasuyuki Hikita,
Harold Y. Hwang
Publication year - 2019
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5090269
Subject(s) - heterojunction , induced high electron mobility transistor , field effect transistor , condensed matter physics , electron mobility , doping , ferroelectricity , materials science , transistor , optoelectronics , fermi gas , hall effect , quantum hall effect , field effect , electron , magnetic field , physics , voltage , quantum mechanics , dielectric