Electronic and optical properties of defective MoSe2 repaired by halogen atoms from first-principles study
Author(s) -
Yuefeng Guo,
Yujin Ji,
Huilong Dong,
Lu Wang,
Youyong Li
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5068712
Subject(s) - halogen , atom (system on chip) , vacancy defect , doping , materials science , atomic radius , acceptor , electron , semiconductor , crystallography , transition metal , atomic physics , chemistry , condensed matter physics , optoelectronics , quantum mechanics , computer science , embedded system , biochemistry , catalysis , alkyl , physics , organic chemistry
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