Open AccessEnhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment
Author(s) -
Brianna Klein,
Erica Ann Douglas,
Andrew M. Armstrong,
Andrew A. Allerman,
Vincent M. Abate,
Torben Ray Fortune,
Albert G. Baca
Publication year - 2019
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5064543
Subject(s) - threshold voltage , transconductance , materials science , etching (microfabrication) , transistor , optoelectronics , hysteresis , electron mobility , ion , voltage , analytical chemistry (journal) , electrical engineering , chemistry , layer (electronics) , condensed matter physics , nanotechnology , physics , organic chemistry , chromatography , engineering