Open AccessEffect of InAs quantum dots capped with GaAs on atomic-scale ordering in Ga0.5In0.5P
Author(s) -
Po-Yi Su,
Hanxiao Liu,
Rudy M. S. Kawabata,
Eleonora Cominato Weiner,
R. Jakomin,
M. P. Pires,
Richard R. King,
P. L. Souza,
F. A. Ponce
Publication year - 2019
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5063941
Subject(s) - quantum dot , indium , cathodoluminescence , transmission electron microscopy , materials science , epitaxy , condensed matter physics , metalorganic vapour phase epitaxy , photoluminescence , chemical vapor deposition , indium arsenide , layer (electronics) , optoelectronics , nanotechnology , luminescence , physics
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