Open AccessImpurity-derived p-type conductivity in cubic boron arsenide
Author(s) -
John L. Lyons,
Joel B. Varley,
E. R. Glaser,
Jaime A. Freitas,
James C. Culbertson,
Fei Tian,
Geethal Amila Gamage,
Haoran Sun,
Hamidreza Ziyaee,
Zhifeng Ren
Publication year - 2018
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5058134
Subject(s) - impurity , acceptor , thermal conductivity , boron , materials science , conductivity , band gap , gallium arsenide , silicon , phonon , condensed matter physics , shallow donor , molecular physics , doping , chemistry , optoelectronics , physics , organic chemistry , composite material
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom