Open AccessPreparation and some properties of Mg2Si0.53Ge0.47 single crystal and Mg2Si0.53Ge0.47 pn-junction diode
Author(s) -
Ahmed A. M. El-Amir,
Takeo Ohsawa,
Yoshitaka Matsushita,
Yoshiki Wada,
Kiyoshi Shimamura,
Naoki Ohashi
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5056221
Subject(s) - materials science , single crystal , photodiode , diode , optoelectronics , crystal (programming language) , substrate (aquarium) , hall effect , electrical resistivity and conductivity , crystallography , chemistry , electrical engineering , oceanography , engineering , computer science , programming language , geology
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