Open AccessHydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique
Author(s) -
Takeaki Yajima,
Go Oike,
Shu Yamaguchi,
Shogo Miyoshi,
Tomonori Nishimura,
Akira Toriumi
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5055302
Subject(s) - materials science , hydrogen , doping , oxide , semiconductor , thin film , chemical physics , optoelectronics , analytical chemistry (journal) , nanotechnology , chemistry , organic chemistry , chromatography , metallurgy
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