Open AccessEffect of annealing conditions on dopants activation and stress conservation in silicon-germanium
Author(s) -
TaiChen Kuo,
Kai-Jyun Jhong,
Chia-Wei Lin,
Wen-Hsi Lee
Publication year - 2019
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5053237
Subject(s) - germanium , materials science , silicon , annealing (glass) , sheet resistance , dopant activation , optoelectronics , dopant , silicon germanium , electron mobility , strained silicon , epitaxy , doping , stress relaxation , electronic engineering , nanotechnology , composite material , crystalline silicon , layer (electronics) , amorphous silicon , creep , engineering
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