Open AccessControlling ZnSe/GaAs interface properties: The role of elemental exposure and photon irradiation during growth initiation
Author(s) -
Kwangwook Park,
Jongmin Kim,
Kirstin Alberi
Publication year - 2018
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5053216
Subject(s) - heterojunction , semiconductor , optoelectronics , materials science , band gap , epitaxy , irradiation , photon , wide bandgap semiconductor , desorption , photoluminescence , nanotechnology , chemistry , layer (electronics) , optics , adsorption , physics , nuclear physics
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