Open AccessInvestigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition
Author(s) -
Kai Fu,
Houqiang Fu,
Hanxiao Liu,
Shanthan Reddy Alugubelli,
Tsung-Han Yang,
Xuanqi Huang,
Hong Chen,
Izak Baranowski,
Jossue Montes,
F. A. Ponce,
Yuji Zhao
Publication year - 2018
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5052479
Subject(s) - materials science , chemical vapor deposition , optoelectronics , doping , diode , epitaxy , metalorganic vapour phase epitaxy , electroluminescence , silicon , wide bandgap semiconductor , gallium nitride , analytical chemistry (journal) , layer (electronics) , nanotechnology , chemistry , chromatography
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