Bandgap modulated phosphorene based gate drain underlap double-gate TFET
Author(s) -
Md. Abdullah-Al-Kaiser,
Dip Joti Paul,
Quazi D. M. Khosru
Publication year - 2018
Publication title -
aip advances
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5049611
Subject(s) - phosphorene , ambipolar diffusion , band gap , optoelectronics , materials science , homojunction , quantum tunnelling , effective mass (spring–mass system) , electron , physics , heterojunction , quantum mechanics
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