Open AccessRadiative and Auger recombination processes in indium nitride
Author(s) -
Andrew McAllister,
Dylan Bayerl,
Emmanouil Kioupakis
Publication year - 2018
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5038106
Subject(s) - auger effect , auger , voltage droop , materials science , spontaneous emission , indium , optoelectronics , wide bandgap semiconductor , radiative transfer , quantum efficiency , carrier lifetime , band gap , atomic physics , physics , optics , silicon , power (physics) , thermodynamics , laser , voltage divider
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