Open AccessRadiation defect dynamics in GaAs studied by pulsed ion beams
Author(s) -
L. B. Bayu Aji,
J. B. Wallace,
S. O. Kucheyev
Publication year - 2018
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5038018
Subject(s) - annealing (glass) , gallium arsenide , ion , materials science , irradiation , atmospheric temperature range , activation energy , semiconductor , gallium , atomic physics , crystallographic defect , analytical chemistry (journal) , optoelectronics , chemistry , crystallography , thermodynamics , nuclear physics , physics , organic chemistry , chromatography , metallurgy , composite material
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